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OPA211AI Datasheet(PDF) 18 Page - Texas Instruments |
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OPA211AI Datasheet(HTML) 18 Page - Texas Instruments |
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18 / 37 page ![]() R F Op-Amp Core R I R L V (1) IN I D -In Out +In ESDCurrent- SteeringDiodes Edge-TriggeredESD AbsorptionCircuit +V S +V -V -VS OPA211 OPA211 OPA2211 SBOS377G – OCTOBER 2006 – REVISED MAY 2009...................................................................................................................................................... www.ti.com (1) VIN = +VS + 500mV. Figure 49. Equivalent Internal ESD Circuitry and Its Relation to a Typical Circuit Application An ESD event produces a short duration, Figure 49 depicts a specific example where the input high-voltage pulse that is transformed into a short voltage, VIN, exceeds the positive supply voltage duration, high-current pulse as it discharges through (+VS) by 500mV or more. Much of what happens in a semiconductor device. The ESD protection circuits the circuit depends on the supply characteristics. If are designed to provide a current path around the +VS can sink the current, one of the upper input operational amplifier core to prevent it from being steering diodes conducts and directs current to +VS. damaged. The energy absorbed by the protection Excessively high current levels can flow with circuitry is then dissipated as heat. increasingly higher VIN. As a result, the datasheet When an ESD voltage develops across two or more specifications recommend that applications limit the of the amplifier device pins, current flows through one input current to 10mA. or more of the steering diodes. Depending on the If the supply is not capable of sinking the current, VIN path that the current takes, the absorption device may begin sourcing current to the operational may activate. The absorption device has a trigger, or amplifier, and then take over as the source of positive threshold voltage, that is above the normal operating supply voltage. The danger in this case is that the voltage of the OPA211 but below the device voltage can rise to levels that exceed the operational breakdown voltage level. Once this threshold is amplifier absolute maximum ratings. In extreme but exceeded, the absorption device quickly activates rare cases, the absorption device triggers on while and clamps the voltage across the supply rails to a +VS and –VS are applied. If this event happens, a safe level. direct current path is established between the +VS When the operational amplifier connects into a circuit and –VS supplies. The power dissipation of the such as that illustrated in Figure 49, the ESD absorption device is quickly exceeded, and the protection components are intended to remain extreme internal heating destroys the operational inactive and not become involved in the application amplifier. circuit operation. However, circumstances may arise Another common question involves what happens to where an applied voltage exceeds the operating the amplifier if an input signal is applied to the input voltage range of a given pin. Should this condition while the power supplies +VS and/or –VS are at 0V. occur, there is a risk that some of the internal ESD Again, it depends on the supply characteristic while at protection circuits may be biased on, and conduct 0V, or at a level below the input signal amplitude. If current. Any such current flow occurs through the supplies appear as high impedance, then the steering diode paths and rarely involves the operational amplifier supply current may be supplied absorption device. by the input source via the current steering diodes. This state is not a normal bias condition; the amplifier 18 Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s): OPA211 OPA2211 |
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