PMDPB70XP

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© NXP B.V. 2012. All rights reserved.

Product data sheet

Rev. 1 — 9 March 2012

7 of 15

NXP Semiconductors

PMDPB70XP

30 V, dual P-channel Trench MOSFET

(1) minimum values

(2) typical values

(3) maximum values

Fig 6.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 7.

Sub-threshold drain current as a function of

gate-source voltage

Fig 8.

Drain-source on-state resistance as a function

of drain current; typical values

Fig 9.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

0

-2.0

-1.5

-0.5

-1.0

017aaa400

-2

-3

-1

-4

-5

(A)

0

-4.5 V

-2.5 V

-1.5 V

-1.7 V

-1.8 V

017aaa401

(A)

0

-0.25

-0.10

-0.50

-0.75

-0.25

(1)

(2)

(3)

0-5

-4

-2

-3

-1

017aaa402

0.1

0.2

0.3

(Ω)

0

-1.8 V

-2 V

-2.5 V

-4.5 V

017aaa403

0-6

-4

-2

0.4

0.6

0.2

0.8

1.0

(Ω)

0

(1)

(2)