PMDPB70XP

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Product data sheet

Rev. 1 — 9 March 2012

8 of 15

NXP Semiconductors

PMDPB70XP

30 V, dual P-channel Trench MOSFET

Fig 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 11. Normalized drain-source on-state resistance as

a function of junction temperature; typical

values

(1) maximum values

(2) typical values

(3) minimum values

Fig 12. Gate-source threshold voltage as a function of

junction temperature

Fig 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

0

-2.5

-2.0

-1.0

-1.5

-0.5

017aaa404

-1

-2

-3

(A)

0

(1)

(2)

-60

180

120

060

017aaa405

1.0

0.5

1.5

2.0

a

0

-60

180

120

060

017aaa406

-0.5

-1.0

-1.5

(V)

0

(3)

(2)

(1)

017aaa407

0

-10

-1

C

(pF)

10

(1)

(2)

(3)