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PMDPB70XP Datasheet(PDF) 9 Page - NXP Semiconductors |
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PMDPB70XP Datasheet(HTML) 9 Page - NXP Semiconductors |
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9 / 15 page ![]() PMDPB70XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 9 March 2012 9 of 15 NXP Semiconductors PMDPB70XP 30 V, dual P-channel Trench MOSFET ID = −3.3 A; VDS = −10 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions VGS = 0 V (1) Tamb = 150 °C (2) Tamb = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values 017aaa408 QG (nC) 06 4 2 -2 -4 -6 VGS (V) 0 017aaa137 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) 017aaa409 VSD (V) 0 -1.2 -0.8 -0.4 -1.6 -0.8 -2.4 -3.2 IS (A) 0 (1) (2) |
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