PMPB11EN datasheet(4/15 Pages) NXP

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PMPB11EN

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Product data sheet

Rev. 1 — 16 May 2012

4 of 15

NXP Semiconductors

PMPB11EN

30 V N-channel Trench MOSFET

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.

[3]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t

≤ 5 s

IDM = single pulse

Fig 3.

Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source

voltage

017aaa553

10-1

102

(A)

10-2

VDS (V)

10-1

102

Limit RDSon = VDS/ID

tp = 10 μs

tp = 100 μs

tp = 1 ms

tp = 10 ms

DC; Tsp = 25 °C

tp = 100 ms

DC; Tamb = 25 °C;

drain mounting pad 6 cm2

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance

from junction to

ambient

in free air

[1]

235

270

K/W

[2]

6774K/W

[3]

3336K/W

Rth(j-sp)

thermal resistance

from junction to solder

point

-5

K/W

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