PMPB11EN

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© NXP B.V. 2012. All rights reserved.

Product data sheet

Rev. 1 — 16 May 2012

7 of 15

NXP Semiconductors

PMPB11EN

30 V N-channel Trench MOSFET

Fig 6.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 7.

Sub-threshold drain current as a function of

gate-source voltage

Fig 8.

Drain-source on-state resistance as a function

of drain current; typical values

Fig 9.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

04

3

12

017aaa554

10

15

5

20

25

(A)

0

3 V

2.7 V

2.5 V

2.3 V

2.1 V

2.9 V

017aaa555

(A)

0.0

2.5

2.0

1.0

1.5

0.5

min

typ

max

025

20

10

15

5

017aaa556

20

30

10

40

50

(mΩ)

0

2.5 V

3.0 V

3.25 V

3.5 V

4.0 V

5.0 V

4.5 V

08

6

24

017aaa557

20

30

10

40

50

(mΩ)

0