PMPB11EN

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2012. All rights reserved.

Product data sheet

Rev. 1 — 16 May 2012

6 of 15

NXP Semiconductors

PMPB11EN

30 V N-channel Trench MOSFET

7.

Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

drain-source

breakdown voltage

30

--V

gate-source threshold

voltage

1

1.5

2

V

drain leakage current

--1

µA

--20

µA

gate leakage current

-

-

100

nA

-

-

100

nA

drain-source on-state

resistance

-

12

14.5

m

Ω

-

18

20.5

m

Ω

-

14

16.5

m

Ω

forward

transconductance

-

20

-

S

gate resistance

f = 1 MHz

-

1.6

-

Ω

Dynamic characteristics

total gate charge

-

13.7

20.6

nC

gate-source charge

-

1.73

-

nC

gate-drain charge

-

1.71

-

nC

input capacitance

-

840

-

pF

output capacitance

-

155

-

pF

reverse transfer

capacitance

-65

-pF

turn-on delay time

-9

-ns

rise time

-

10

-

ns

turn-off delay time

-

17

-

ns

fall time

-9

-ns

Source-drain diode

source-drain voltage

-

0.8

1.2

V