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ADA4610S Datasheet(PDF) 4 Page - Analog Devices |
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ADA4610S Datasheet(HTML) 4 Page - Analog Devices |
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4 / 18 page ![]() ADA4610S ASD0016547 Rev. A | Page 4 of 18 Parameter See notes at end of table Symbol Conditions 1/ Unless otherwise specified Sub-Group Limit Min Limit Max Units TRANSIENT RESPONSE Rise Time tR VIN = 5 mVp-p, RL = 2 kΩ, CL = 100pF, AV =-1 2/ 3/ 6/ 4 31 nS 5 57 6 24 Fall Time tF VIN = 5 mVp-p, RL = 2 kΩ, CL = 100pF, AV =-1 2/ 3/ 6/ 4 51 nS 5 69 6 39 Settling Time +TS 0.1% error, AV =-1 2/ 3/ 4 430 nS 5 540 6 410 -TS 0.1% error, AV =-1 2/ 3/ 4 450 nS 5 670 6 650 Overshoot +OVR VIN = 5 mVp-p, RL = 2 kΩ, CL = 100pF, AV =-1 2/ 3/ 4 12 nS 5,6 14 -OVR VIN = 5 mVp-p, RL = 2 kΩ, CL = 100pF, AV =-1 2/ 3/ 4,5,6 20 nS DYNAMIC PERFORMANCE Gain Bandwidth Product GBP VIN = 5 mVp-p, RL = 2 kΩ, AV = -100 2/ 3/ 4 17 MHz 5 9 6 24 Slew Rate +SR RL = 2 kΩ, CL = 100pF 2/ 3/ 6/ 4 25 V/µs 5 13 6 33 -SR RL = 2 kΩ, CL = 100pF 2/ 3/ 6/ 4 -17 V/µs 5 -11 6 -19 NOISE PERFORMANCE Peak-to-Peak Voltage Noise en p-p 0.1 Hz to 10 Hz bandwidth 2/ 3/ 4 1.7 µV p-p 5 4 6 3.2 Voltage Noise Density en f = 10 kHz 2/ 3/ 4 7.3 nV/√Hz 5 10.5 6 5.5 TABLE IA NOTES: 1/ TA nom = 25ºC, TA max = 125ºC, TA min = -55ºC and VCM = 0V unless otherwise noted 2/ Parameter is part of device initial characterization which is only repeated after design and process changes or with subsequent wafer lots. 3/ Parameter is not tested post irradiation 4/ Calculated from 25ºC to -55ºC, 25ºC to 125ºC and -55ºC to 125ºC 5/ Input bias current increases exponentially as T>45°C. See Figure 10 in Section 7.0 Application Notes. 6/ Measured from 10% to 90% and 90% to 10% of output swing. 7/ While the ADA4610 is internally short circuit protected, this may not be sufficient to guarantee that the maximum junction temperature is not exceeded under all conditions. Do not exceed maximum Tj in application with output current load. |
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