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APW7165C Datasheet(PDF) 15 Page - Anpec Electronics Coropration |
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APW7165C Datasheet(HTML) 15 Page - Anpec Electronics Coropration |
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15 / 20 page ![]() Copyright © ANPEC Electronics Corp. Rev. A.2 - Oct., 2012 APW7165C www.anpec.com.tw 15 Application Information (Cont.) Layout Consideration (Cont.) Figure 8. Layout Guidelines - Keep the switching nodes (UGATE, LGATE, and PHASE) away from sensitive small signal nodes since these nodes are fast moving signals. Therefore, keep traces to these nodes as short as possible. - The traces from the gate drivers to the MOSFETs (UG and LG) should be short and wide. - Place the source of the high-side MOSFET and the drain of the low-side MOSFET as close as possible. Minimiz- ing the impedance with wide layout plane between the two pads reduces the voltage bounce of the node. - Decoupling capacitor, compensation component, the resistor dividers, and boot capacitors should be close their pins. (For example, place the decoupling ceramic capacitor near the drain of the high-side MOSFET as close as possible. The bulk capacitors are also placed near the drain). - The input capacitor should be near the drain of the up- per MOSFET; the output capacitor should be near the loads. The input capacitor GND should be close to the output capacitor GND and the lower MOSFET GND. - The drain of the MOSFETs (V IN and PHASE nodes) should be a large plane for heat sinking. - The R OCSET resistance should be placed near the IC as close as possible. ances and the magnitude of voltage spike. And signal and power grounds are to be kept separate till combined using ground plane construction or single point grounding. Figure 8. illustrates the layout, with bold lines indicating high current paths; these traces must be short and wide. Components along the bold lines should be placed lose together. Below is a checklist for your layout: VCC BOOT PHASE UGATE LGATE V IN V OUT L O A D APW7165C R OCSET Close to IC |
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