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OPA832 Datasheet(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part # OPA832
Description  Low-Power, Single-Supply, Fixed-Gain Video Buffer Amplifier
PDF  30 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

OPA832 Datasheet(HTML) 4 Page - National Semiconductor (TI)

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OPA832
SBOS266E − JUNE 2003 − REVISED AUGUST 2008
www.ti.com
4
ELECTRICAL CHARACTERISTICS: VS = +5V
Boldface limits are tested at +25
°C.
At TA = 25°C, G = +2, and RL = 150Ω to VCM = 2V, unless otherwise noted (see Figure 1).
OPA832ID, IDBV
TYP
MIN/MAX OVER TEMPERATURE
PARAMETER
CONDITIONS
+25
°C
+25
°C(1)
0
°C to
70
°C(2)
−40
°C to
+85
°C(2)
UNITS
MIN/
MAX
TEST
LEVEL(3)
AC PERFORMANCE (see Figure 1)
Small-Signal Bandwidth
G = +2, VO ≤ 0.5VPP
92
56
55
55
MHz
min
B
G = −1, VO ≤ 0.5VPP
103
60
58
58
MHz
min
B
Peaking at a Gain of +1
VO ≤ 0.5VPP
4.2
dB
typ
C
Slew Rate
G = +2, 2V Step
348
230
223
223
V/
µs
min
B
Rise Time
0.5V Step
4.3
ns
max
B
Fall Time
0.5V Step
4.6
ns
max
B
Settling Time to 0.1%
G = +2, 1V Step
4.6
ns
max
B
Harmonic Distortion
VO = 2VPP, 5MHz
2nd-Harmonic
RL = 150Ω
−59
−56
−56
−55
dBc
max
B
RL = 500Ω
−62
−59
−59
−59
dBc
max
B
3rd-Harmonic
RL = 150Ω
−56
−50
−49
−47
dBc
max
B
RL = 500Ω
−72
−65
−62
−58
dBc
max
B
Input Voltage Noise
f > 1MHz
9.3
nV/
√Hz
max
B
Input Current Noise
f > 1MHz
2.3
pA/
√Hz
max
B
NTSC Differential Gain
RL = 150Ω
0.11
%
typ
C
NTSC Differential Phase
RL = 150Ω
0.14
°
typ
C
DC PERFORMANCE(4)
Gain Error
G = +2
±0.3
±1.5
±1.6
±1.7
%
min
A
G = −1
±0.2
±1.5
±1.6
±1.7
%
max
B
Internal RF and RG, Maximum
400
455
460
462
Ω
max
A
Minimum
400
345
340
338
Ω
max
A
Average Drift
0.1
0.1
%/
°C
max
B
Input Offset Voltage
±0.5
±5
±6
±6.5
mV
max
A
Average Offset Voltage Drift
—
±20
±20
µV/°C
max
B
Input Bias Current
VCM = 2.0V
5.5
+10
+12
+13
µA
max
A
Input Bias Current Drift
±12
±12
nA/
°C
max
B
Input Offset Current
VCM = 2.0V
±0.1
±1.5
±2
±2.5
µA
max
A
Input Offset Current Drift
—
±10
±10
nA/
°C
max
B
INPUT
Least Positive Input Voltage
−0.5
−0.2
0
+0.1
V
max
B
Most Positive Input Voltage
3.3
3.2
3.1
3.0
V
min
B
Input Impedance
Differential-Mode
10
 2.1
k
Ω pF
typ
C
Common-Mode
400
 1.2
k
Ω pF
typ
C
OUTPUT
Least Positive Output Voltage
RL = 1kΩ to 2.0V
0.03
0.16
0.18
0.20
V
max
A
RL = 150Ω to 2.0V
0.18
0.3
0.35
0.40
V
max
A
Most Positive Output Voltage
RL = 1kΩ to 2.0V
4.94
4.8
4.6
4.4
V
min
A
RL = 150Ω to 2.0V
4.86
4.6
4.5
4.4
V
min
A
Current Output, Sourcing
80
60
55
52
mA
min
A
Current Output, Sinking
80
60
55
52
mA
min
A
Short-Circuit Output Current
Output Shorted to Either Supply
100
mA
typ
C
Closed-Loop Output Impedance
G = +2, f
≤ 100kHz
0.2
Ω
typ
C
POWER SUPPLY
Minimum Operating Voltage
+2.8
V
typ
C
Maximum Operating Voltage
—
+11
+11
+11
V
max
A
Maximum Quiescent Current
VS = +5V
3.9
4.1
4.8
5.5
mA
max
A
Minimum Quiescent Current
VS = +5V
3.9
3.7
3.5
3.2
mA
min
A
Power-Supply Rejection Ratio (PSRR)
Input-Referred
66
61
60
59
dB
min
A
THERMAL CHARACTERISTICS
Specification: ID, IDBV
−40 to +85
°C
typ
C
Thermal Resistance
D
SO-8
125
°C/W
typ
C
DBV SOT23-5
150
°C/W
typ
C
(1)
Junction temperature = ambient for +25
°C specifications.
(2)
Junction temperature = ambient at low temperature limits; junction temperature = ambient +5
°C at high temperature limit for over temperature.
(3)
Test levels: (A) 100% tested at +25
°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only
for information.
(4) Current is considered positive out of node.



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