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OPA835IDBVT Datasheet(PDF) 1 Page - National Semiconductor (TI) |
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OPA835IDBVT Datasheet(HTML) 1 Page - National Semiconductor (TI) |
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1 / 53 page  -140 -120 -100 -80 -60 -40 -20 0 0 20,000 40,000 60,000 80,000 100,000 120,000 Frequency (Hz) 2.7V ADS8326 +In -In 100 2.2nF 2k 2k V IN OPA835 V S- 2k 4.02k 4.02k 2.5V 5V V S+ V DD REF 2.7V 0V V SIG 1.35V V SIG OPA835 OPA2835 www.ti.com SLOS713E – JANUARY 2011 – REVISED JULY 2013 Ultra Low-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp Check for Samples: OPA835, OPA2835 1 FEATURES DESCRIPTION Fabricated using the industry-leading BiCom-3x • Ultra Low Power (SiGe complimentary bipolar) process, the OPA835 – Supply Voltage: 2.5 V to 5.5 V and OPA2835 are single and dual ultra low-power, – Quiescent Current: 250 µA (typ) rail-to-rail output, negative rail input, voltage-feedback operational amplifiers designed to operate over a – Power Down Mode: 0.5 µA (typ) power supply range of 2.5 V to 5.5 V Single Supply • Bandwidth: 56 MHz and ±1.25 V to ±2.75 V dual supply. Consuming only • Slew Rate: 160 V/µs 250 µA per channel and a unity gain bandwidth of 56 MHz, these amplifiers set an industry leading power- • Rise Time: 10 ns (2 VSTEP) to-performance ratio for rail-to-rail amplifiers. • Settling Time: 45 ns (2VSTEP) For battery powered portable applications where • Overdrive Recovery Time: 195 ns power is of key importance, the OPA835's and • SNR: 0.00015% (–116.4dBc) at 1 kHz (1 VRMS) OPA2835's low power consumption and high • THD: 0.00003% (–130 dBc) at 1 kHz (1 VRMS) frequency performance offers designers performance versus power not attainable in other devices. Coupled • HD2/HD3: –70 dBc/–73 dBc at 1 MHz (2 VPP) with a power savings mode to reduce current to <1.5 • Input Voltage Noise: 9.3 nV/ √Hz (f = 100 kHz) μA, the device offers an attractive solution for high • Input Offset Voltage: 100 µV (500 µV max) frequency amplifiers in battery powered applications. • CMRR: 113 dB The OPA835 and OPA2835 are offered in following • Output Current Drive: 40 mA package options: • RRO – Rail-to-Rail Output • OPA835 Single: SOT23-6 (DBV), and 10 pin WQFN (RUN) with integrated gain resistors. • Input Voltage Range: –0.2 V to 3.9 V • OPA2835 Dual: SOIC-8 (D), VSSOP (MSOP) -10 (5 V supply) (DGS), 10 pin WQFN (RUN), and 10 pin UQFN • Operating Temperature Range: (RMC). –40°C–125°C The OPA835 RUN package option includes integrated gain setting resistors for smallest possible APPLICATIONS footprint on a printed circuit board ( ≈ 2mm x 2mm). • Low Power Signal Conditioning By adding circuit traces on the PCB, gains of +1, -1, - • Audio ADC Input Buffer 1.33, +2, +2.33, -3, +4, -4, +5, -5.33, +6.33, -7, +8 and inverting attenuations of -0.1429, -0.1875, -0.25, • Low Power SAR and ΔΣ ADC Driver -0.33, -0.75 can be achieved. See Application • Portable Systems Information section for details. • Low Power Systems The devices are characterized for operation over the • High Density Systems extended industrial temperature range –40°C to • Ultrasonic Flow Meter 125°C. OPA835 Related Products DESCRIPTION SINGLES DUALS TRIPLES QUADS Rail-to-Rail — OPA2830 — OPA4830 Rail-to-Rail, Low OPA836 OPA2836 — — Power Rail-to-Rail, Fixed OPA832 OPA2832 OPA3832 — Gain General-Purpose, High OPA690 OPA2690 OPA3690 — Slew Rate Low-Noise, DC OPA820 OPA2822 — OPA4820 Precision 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Copyright © 2011–2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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