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THS4524MDBTEP Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # THS4524MDBTEP
Description  VERY LOW POWER, NEGATIVE RAIL INPUT, RAIL-TO-RAIL OUTPUT,FULLY DIFFERENTIAL AMPLIFIER
PDF  48 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

THS4524MDBTEP Datasheet(HTML) 3 Page - National Semiconductor (TI)

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THS4524-EP
www.ti.com
SBOS609A – JUNE 2012 – REVISED AUGUST 2013
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION(1)
ORDERABLE PART
TA
PACKAGE-LEAD
PACKAGE DESIGNATOR
TOP-SIDE MARKING
VID NUMBER
NUMBER
Tape and reel,
THS4524MDBTREP
THS4524EP
V62/12612-01XE
2000
-55°C to 125°C
TSSOP - 38
DBT
Rails, 50
THS4524MDBTEP
THS4524EP
V62/12612-01XE-T
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range (unless otherwise noted).
THS4524
UNIT
Supply Voltage, VS– to VS+
5.5
V
Input/Output Voltage, VI (VIN±, VOUT±, VOCM pins)
(VS–) – 0.7 to (VS+) + 0.7V
V
Differential Input Voltage, VID
1
V
Output Current, IO
100
mA
Input Current, II (VIN±, VOCM pins)
10
mA
Continuous Power Dissipation
See Thermal Characteristic Specifications
Maximum Junction Temperature, TJ
+150
°C
Maximum Junction Temperature, TJ (continuous operation, long-term reliability)
+125
°C
Operating Free-air Temperature Range, TA
–55 to 125
°C
Storage Temperature Range, TSTG
–65 to +150
°C
Human Body Model (HBM)
1300
V
ESD
Charge Device Model (CDM)
1000
V
Rating:
Machine Model (MM)
50
V
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability.
Copyright © 2012–2013, Texas Instruments Incorporated
Submit Documentation Feedback
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Product Folder Links :THS4524-EP



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