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THS4524MDBTEP Datasheet(PDF) 7 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # THS4524MDBTEP
Description  VERY LOW POWER, NEGATIVE RAIL INPUT, RAIL-TO-RAIL OUTPUT,FULLY DIFFERENTIAL AMPLIFIER
PDF  48 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

THS4524MDBTEP Datasheet(HTML) 7 Page - National Semiconductor (TI)

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THS4524-EP
www.ti.com
SBOS609A – JUNE 2012 – REVISED AUGUST 2013
ELECTRICAL CHARACTERISTICS: VS+ – VS– = 5 V
At VS+ = +5 V, VS– = 0 V, VOCM = open, VOUT = 2 VPP (differential), RF = 1 kΩ, RL = 1 kΩ differential, G = 1 V/V, single-ended
input, differential output, input and output referenced to midsupply, unless otherwise noted.
TA = -55°C to 125°C
TEST
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
LEVEL(1)
AC PERFORMANCE
Small-Signal Bandwidth
VOUT = 100 mVPP, G = 1
145
MHz
C
VOUT = 100 mVPP, G = 2
50
MHz
C
VOUT = 100 mVPP, G = 5
20
MHz
C
VOUT = 100 mVPP, G = 10
9.5
MHz
C
Gain Bandwidth Product
VOUT = 100 mVPP, G = 10
95
MHz
C
Large-Signal Bandwidth
VOUT = 2 VPP, G = 1
145
MHz
C
Bandwidth for 0.1-dB Flatness
VOUT = 2 VPP, G = 1
30
MHz
C
Rising Slew Rate (Differential)
VOUT = 2-V Step, G = 1, RL = 200 Ω
490
V/
μs
C
Falling Slew Rate (Differential)
VOUT = 2-V Step, G = 1, RL = 200 Ω
600
V/
μs
C
Overshoot
VOUT = 2-V Step, G = 1, RL = 200 Ω
1
%
C
Undershoot
VOUT = 2-V Step, G = 1, RL = 200 Ω
2.6
%
C
Rise Time
VOUT = 2-V Step, G = 1, RL = 200 Ω
3.4
ns
C
Fall Time
VOUT = 2-V Step, G = 1, RL = 200 Ω
3
ns
C
Settling Time to 1%
VOUT = 2-V Step, G = 1, RL = 200 Ω
10
ns
C
Harmonic Distortion
f = 1 kHz, VOUT = 1 VRMS, G = 1
(2),
2nd harmonic
–122
dBc
C
differential input
f = 1 MHz, VOUT = 2 VPP, G = 1
–85
dBc
C
f = 1 kHz, VOUT = 1 VRMS, G = 1
(2),
3rd harmonic
–141
dBc
C
differential input
f = 1 MHz, VOUT = 2 VPP, G = 1
–91
dBc
C
Two-tone, f1 = 2 MHz, f2 = 2.2 MHz,
Second-Order Intermodulation Distortion
–86
dBc
C
VOUT = 2-VPP envelope
Two-tone, f1 = 2 MHz, f2 = 2.2 MHz,
Third-Order Intermodulation Distortion
–93
dBc
C
VOUT = 2-VPP envelope
Input Voltage Noise
f > 10 kHz
4.6
nV/
√Hz
C
Input Current Noise
f > 100 kHz
0.6
pA/
√Hz
C
VOUT = 5 VPP, 20 Hz to 22 kHz BW,
SNR
114
dBc
C
differential input
f = 1 kHz , VOUT = 5 VPP, 20 Hz to 22 kHz BW,
THD+N
112
dBc
C
differential input
Overdrive Recovery Time
Overdrive = ±0.5 V
75
ns
C
Output Balance Error
VOUT = 100 mV, f < 2 MHz, VIN differential
–57
dB
C
Closed-Loop Output Impedance
f = 1 MHz (differential)
0.3
Ω
C
Channel-to-Channel Crosstalk
f = 10 kHz, measured differentially
–125
dB
C
DC PERFORMANCE
Open-Loop Voltage Gain (AOL)
83
119
dB
A
Input-Referred Offset Voltage
±0.5
±8
mV
A
Input offset voltage drift(3)
±2
μV/°C
C
Input Bias Current
0.9
5.5
μA
A
Input bias current drift(3)
±1.8
nA/°C
C
(1)
Test levels: (A) 100% tested. (B) Limits set by characterization and simulation. (C) Typical value only for information.
(2)
Not directly measureable; calculated using noise gain of 101 as described in the Applications section, Audio Performance.
(3)
Input Offset Voltage Drift, Input Bias Current Drift, and Input Offset Current Drift are average values calculated by taking data at –55°C
and +125°C, computing the difference, and dividing by 180.
Copyright © 2012–2013, Texas Instruments Incorporated
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