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LM5113 Datasheet(PDF) 5 Page - Texas Instruments

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Part # LM5113
Description  5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs
PDF  24 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LM5113 Datasheet(HTML) 5 Page - Texas Instruments

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LM5113
www.ti.com
SNVS725E – JUNE 2011 – REVISED JANUARY 2012
Electrical Characteristics
Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature (TJ) range of -40°C
to +125°C. Minimum and Maximum limits are guaranteed through test, design, or statistical correlation. Typical values
represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise
specified, VDD = VHB = 5V, VSS = VHS = 0V, No Load on LOL and HOL or HOH and HOL
(1).
Symbol
Parameter
Conditions
Min
Typ
Max
Units
SUPPLY CURRENTS
IDD
VDD Quiescent Current
LI = HI = 0V
0.07
0.1
mA
IDDO
VDD Operating Current
f = 500 kHz
2.0
3.0
mA
IHB
Total HB Quiescent Current
LI = HI = 0V
0.08
0.1
mA
IHBO
Total HB Operating Current
f = 500 kHz
1.5
2.5
mA
IHBS
HB to VSS Current, Quiescent
HS = HB = 100V
0.1
8
µA
IHBSO
HB to VSS Current, Operating
f = 500 kHz
0.4
1.0
mA
INPUT PINS
VIR
Input Voltage Threshold
Rising Edge
1.89
2.06
2.18
V
VIF
Input Voltage Threshold
Falling Edge
1.48
1.66
1.76
V
VIHYS
Input Voltage Hysteresis
400
mV
RI
Input Pulldown Resistance
100
200
300
k
Ω
UNDER VOLTAGE PROTECTION
VDDR
VDD Rising Threshold
3.2
3.8
4.5
V
VDDH
VDD Threshold Hysteresis
0.2
V
VHBR
HB Rising Threshold
2.5
3.2
3.9
V
VHBH
HB Threshold Hysteresis
0.2
V
BOOTSTRAP DIODE
VDL
Low-Current Forward Voltage
IVDD-HB = 100 µA
0.45
0.65
V
VDH
High-Current Forward Voltage
IVDD-HB = 100 mA
0.90
1.00
V
RD
Dynamic Resistance
IVDD-HB = 100 mA
1.85
3.60
Ω
HB-HS Clamp
Regulation Voltage
4.7
5.2
5.45
V
LOW & HIGH SIDE GATE DRIVER
VOL
Low-Level Output Voltage
IHOL = ILOL = 100 mA
0.06
0.10
V
VOH
High-Level Output Voltage
IHOH = ILOH = 100 mA
0.21
0.31
V
VOH = VDD – LOH or VOH = HB – HOH
IOHL
Peak Source Current
HOH, LOH = 0V
1.2
A
IOLL
Peak Sink Current
HOL, LOL = 5V
5
A
IOHLK
High-Level Output Leakage Current
HOH, LOH = 0V
1.5
µA
IOLLK
Low-Level Output Leakage Current
HOL, LOL = 5V
1.5
µA
THERMAL RESISTANCE
θJA
Junction to Ambient (2)
LLP-10
40
°C/W
12-bump micro SMD
80
°C/W
(1)
Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlation
using Statistical Quality Control (SQC) methods. Limits are used to calculate National’s Average Outgoing Quality Level (AOQL).
(2)
Four layer board with Cu finished thickness 1.5/1/1/1.5 oz. Maximum die size used. 5x body length of Cu trace on PCB top. 50 x 50mm
ground and power planes embedded in PCB. See Application Note AN-1187.
Copyright © 2011–2012, Texas Instruments Incorporated
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