LM5113

www.ti.com

SNVS725E – JUNE 2011 – REVISED JANUARY 2012

LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs

Check for Samples: LM5113

1

FEATURES

•

Excellent propagation delay matching (1.5ns

typical)

2

•

Independent high-side and low-side TTL logic

•

Supply rail under-voltage lockout

inputs

•

Low power consumption

•

1.2A/5A peak source/sink current

•

High-side floating bias voltage rail operates up

TYPICAL APPLICATIONS

to 100VDC

•

Current Fed Push-Pull converters

•

Internal bootstrap supply voltage clamping

•

Half and Full-Bridge converters

•

Split outputs for adjustable turn-on/turn-off

strength

•

Synchronous Buck converters

•

0.6

Ω /2.1Ω pull-down/pull-up resistance

•

Two-switch Forward converters

•

Fast propagation times (28ns typical)

•

Forward with Active Clamp converters

DESCRIPTION

The LM5113 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN)

FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a

high-side enhancement mode GaN FET operating up to 100V. The high-side bias voltage is generated using a

bootstrap technique and is internally clamped at 5.2V, which prevents the gate voltage from exceeding the

maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic

compatible, and can withstand input voltages up to 14V regardless of the VDD voltage. The LM5113 has split

gate outputs, providing flexibility to adjust the turn-on and turn-off strength independently.

In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended

turn-on during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard

LLP-10 pin package and a 12-bump micro SMD package. The LLP-10 pin package contains an exposed pad to

aid power dissipation. The micro SMD package offers a compact footprint and minimized package inductance.

Packages

•

LLP-10 (4 mm x 4 mm)

•

micro SMD (2 mm x 2 mm)

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2

All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Copyright © 2011–2012, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.