HSC5094 datasheet(4/7 Pages) HSMC

4 / 7 page

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HN200103

Issued Date : 1999.08.01

Revised Date : 2002.10.25

Page No. : 4/7

HSC5094

HSMC Product Specification

HSPICE 2G.6 Model

• NPN BJT Parameters

IS=1.444E-16 (A)

IKR=10.0E-3

MJE=0.3882

TR=1.0E-9 (Sec)

BF=85.9

ISC=1.21E-16

TF=1.22E-11 (Sec)

CJS=2.43E-13 (F)

NF=1.0

NC=1.01

XTF=1.70

VJS=0.5734 (V)

VAF=45.9 (V)

RB=4.30 (Ohm)

VTF=0.69 (V)

MJS=0.3798

IKF=160.3E-3 (A)

IRB=20.0E-3 (A)

ITF=0.1 (A)

XTB=0.0

ISE=2.0E-18 (A)

RBM=2.78 (Ohm)

PTF=10.0 (deg)

EG=1.11 (eV)

NE=2.0

RE=1.011 (Ohm)

CJC=2.38E-13 (F)

XTI=3.0

BR=18.54

RC=16.69 (Ohm)

VJC=0.7 (V)

FC=0.9

NR=1.01

CJE=6.04E-13 (F)

MJC=0.4474

TNOM=25 (

°C)

VAR=6.299

VJE=1.003 (V)

XCJC=0.3

• B’-E’ DIODE Parameters

IS=1.0E-22 (A)

CJO=1.0E-15 (F)

XTI=3.0

KF=0.0

RS=10.0 (Ohm)

VJ=1.003 (V)

FC=0.9

AF=1.0

N=1.0

M=0.3882

BV=0.0 (V)

TNOM=25 (

°C)

TT=0.0 (Sec)

EG=1.11 (eV)

IBV=1.0E-3 (A)

• C’-S’ DIODE Parameters

IS=1.0E-22 (A)

CJO=1.0E-15 (F)

XTI=3.0

KF=0.0

RS=0.0 (Ohm)

VJ=0.5734 (V)

FC=0.5

AF=1.0

N=1.0

M=0.3798

BV=0.0 (V)

TNOM=27 (

°C)

TT=0.0 (Sec)

EG=1.11 (eV)

IBV=1.0E-3(A)

• Other Parasitic Parameters

EX=0.0 (Ohm)

SS=10.0 (Ohm)

C2=150 (fF)

L1=0.5 (nH)

BX=0.0 (Ohm)

SC=250.0 (Ohm)

C3=80 (fF)

L2=0.5 (nH)

CX=0.0 (Ohm)

SP=20.89 (fF)

Le=0.6 (nH)

L3=0.6 (nH)

SX=5.0 (Ohm)

SC=41.79 (fF)

Lb=0.85 (nH)

SP=450.0 (Ohm)

C1=70 (fF)

Lc=0 (nH)

Transistor Chip Equivalent Circuit

Package Equivalent Circuit

B’

0.1nH

G-P

C’

S’

Transistor

Chip

Collector

Base

Emitter

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