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28F016XD Datasheet(PDF) 30 Page - Intel Corporation |
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28F016XD Datasheet(HTML) 30 Page - Intel Corporation |
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30 / 54 page  28F016XD FLASH MEMORY E 30 Read-Modify-Write Cycle Versions 28F016XD-95 Units Sym Parameter Notes Min Max tRWC Read-modify-write cycle time 10 200 ns tRWD RAS# to WE# delay time 5,10 125 ns tCWD CAS# to WE# delay time 5,10 75 ns tAWD Column address to WE# delay time 5,9,10 105 ns tOEH OE# command hold time 10 15 ns Fast Page Mode Cycle Versions 28F016XD-95 Units Sym Parameter Notes Min Max tPC(R) Fast page mode cycle time (reads) 75 ns tPC(W) Fast page mode cycle time (writes) 80 ns tRASP(R) RAS# pulse width (reads) 95 ∞ ns tRASP(W) RAS# pulse width (writes) 80 ∞ ns tCPA Access time from CAS# precharge 85 ns tCPW WE# delay time from CAS# precharge 10 0 ns tCPRH(R) RAS# hold time from CAS# precharge (reads) 75 ns tCPRH(W) RAS# hold time from CAS# precharge (writes) 80 ns Fast Page Mode Read-Modify-Write Cycle Versions 28F016XD-95 Units Sym Parameter Notes Min Max tPRWC Fast page mode read-modify-write cycle time 10 170 ns |
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