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28F016XD Datasheet(PDF) 35 Page - Intel Corporation |
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28F016XD Datasheet(HTML) 35 Page - Intel Corporation |
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35 / 54 page ![]() E 28F016XD FLASH MEMORY 35 Write Cycle Versions 28F016XD-85 Units Sym Parameter Notes Min Max tRC(W) Random write cycle time 75 ns tRAS(W) RAS# pulse width (writes) 65 ∞ ns tCAS(W) CAS# pulse width (writes) 50 ∞ ns tRCD(W) RAS# to CAS# delay time (writes) 1 15 15 ns tRSH(W) RAS# hold time (writes) 50 ns tCSH(W) CAS# hold time (writes) 65 ns tWCS Write command set-up time 5 0 ns tWCH Write command hold time 15 ns tWCR Write command hold time referenced to RAS# 3 30 ns tWP Write command pulse width 15 ns tRWL Write command to RAS# lead time 50 ns tCWL Write command to CAS# lead time 50 ns tDS Data-in set-up time 7,9 0 ns tDH Data-in hold time 7,9 15 ns tDHR Data-in hold time referenced to RAS# 3,9 30 ns Read-Modify-Write Cycle Versions 28F016XD-85 Units Sym Parameter Notes Min Max tRWC Read-modify-write cycle time 10 175 ns tRWD RAS# to WE# delay time 5,10 115 ns tCWD CAS# to WE# delay time 5,10 65 ns tAWD Column address to WE# delay time 5,9,10 100 ns tOEH OE# command hold time 10 15 ns Fast Page Mode Cycle Versions 28F016XD-85 Units Sym Parameter Notes Min Max tPC(R) Fast page mode cycle time (reads) 65 ns tPC(W) Fast page mode cycle time (writes) 65 ns |
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