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NPN SILICON RF TWIN TRANSISTOR

NPN SILICON EPITAXIAL TWIN TRANSISTOR

(WITH BUILT-IN 2

×××× 2SC5006)

FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

Document No. P14552EJ1V0DS00 (1st edition)

Date Published November 1999 N CP(K)

Printed in Japan

DATA SHEET

1999

©

DESCRIPTION

The

µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to

UHF band.

FEATURES

•

•

•

Flat-lead 6-pin thin-type ultra super minimold package

•

Built-in 2 transistors (2

× 2SC5006)

ORDERING INFORMATION

Part Number

Package

Quantity

Supplying Form

µPA821TC

Loose products

(50 pcs)

µPA821TC-T1

Flat-lead 6-pin

thin-type ultra

super minimold

Taping products

(3 kp/reel)

Embossed tape 8 mm wide.

Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face to perforation

side of the tape.

Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:

µPA821TC. Unit sample quantity is 50 pcs).

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

20

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

3V

Collector Current

100

mA

Total Power Dissipation

Note

200 in 1 element

230 in 2 elements

mW

Junction Temperature

150

°C

Storage Temperature

−65 to 150

°C

Note Mounted on 1.08 cm

2

× 1.0 mm glass epoxy substrate.

Caution Electro-static sensitive devices.