UPA821 datasheet(2/12 Pages) NEC

Part #	UPA821

Description	NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	NEC [NEC]

Direct Link	http://www.nec.com/

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Data Sheet P14552EJ1V0DS00

µµµµPA821TC

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector Cutoff Current

ICBO

VCB = 10 V, IE = 0

−−

1.0

µA

Emitter Cutoff Current

IEBO

VEB = 1 V, IC = 0

−−

1.0

µA

DC Current Gain

hFE

VCE = 3 V, IC = 7 mA

Note 1

−

140

Gain Bandwidth Product

VCE = 3 V, IC = 7 mA, f = 1 GHz

3.0

4.5

−

GHz

Feedback Capacitance

Cre

VCB = 3 V, IE = 0, f = 1 MHz

Note 2

−

0.7

1.5

Insertion Power Gain

|S21e|

VCE = 3 V, IC = 7 mA, f = 1 GHz

7.0

9.0

−

Noise Figure

VCE = 3 V, IC = 7 mA, f = 1 GHz

−

1.2

2.5

Notes 1. Pulse Measurement: PW

≤ 350

µs, Duty Cycle ≤ 2 %

2. Capacitance between collector and base measured with a capacitance meter (auto

−balancing bridge

method). Emitter should be connected to the guard pin of capacitance meter.

hFE CLASSIFICATION

Rank

Marking

hFE Value

70 to 140

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