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AN2870 Datasheet(PDF) 39 Page - STMicroelectronics

Part # AN2870
Description  L6585DE combo IC
PDF  41 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN2870 Datasheet(HTML) 39 Page - STMicroelectronics

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AN2870
Designing with L6585DE
39/41
4.3
PCB hints
The following rules, considered during the PCB design, help to optimize the performance of
the L6585DE.
1.
In a board containing both PFC and Ballast section four different ground potentials are
present:
a)
PFC signal ground,
b)
PFC power ground
c)
Ballast signal ground and
d)
Ballast power ground.
These traces are usually kept separate and connected together in correspondence of a low
impedance node (the negative terminal of bulk capacitor). A similar rule has to be followed
in the L6585DE: power grounds are to be kept separate and connected to the negative
terminal of the bulk capacitor, signal grounds should be firstly routed to the pin GND (15)
and then the pin 15 is connected to the negative terminal of bulk capacitor. It is very
important that the ground trace relevant to COSC, RRF and CPRE is connected directly to the
GND pin as shortly as possible.
2.
Ballast PCBs are usually long and narrow, therefore current loops are to be minimized
in order to reduce the electromagnetically induced interference between PFC stage
and Ballast Stage. This is very important when wide range application has to be
implemented.
3.
Regions surrounding the gap of the chokes are usually very noisy therefore signal and
ground traces shouldn’t pass underneath these regions.
4.
Traces that connect the gates of the MOSFETs, the OUT pin and the charge pump
components are affected by voltages that vary with very fast edges. They can
capacitively induce noise to closest traces. Therefore if a signal has to pass near these
nodes an increased distance between traces or, eventually, a ground shield has to be
considered.
5.
Ground pin of shunt components should be placed as close as possible to star
connection point or, at least, close together, this avoids errors reading the voltage
across them and current sense traces has to be kept as short as possible in order to
avoid HF noise induction. In the second case is preferable to connect signal GND to the
ground of the shunts instead of the star point.
6.
Bootstrap capacitor and Vcc ceramic capacitor have to be placed as close as possible
to relevant pins.
7.
Error amplifier feedback network must be small and placed near the IC in order to
reduce any loop that can couple radio interference.
8.
The drain of the PFC MOSFET, the anode of Boost Diode and the PFC choke are
connected together as close as possible. In fact this node experienced very fast edges
and also very high currents.



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