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AN2982 Datasheet(PDF) 17 Page - STMicroelectronics |
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AN2982 Datasheet(HTML) 17 Page - STMicroelectronics |
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17 / 31 page ![]() AN2982 Ballast stage design Doc ID 15599 Rev 1 17/31 The RMS value of one side of the half bridge is equal to: Equation 36 The power dissipation of the half-bridge current sense resistor is equal to: Equation 37 A blocking capacitor Cblock = 100 nF (400 Vac) is used. The choke form factor is an EF25 core (Ae = 52 mm 2, l e = 58 mm, material N87 or equivalent having Bmax<300 mT). Its design parameters are as follows: Equation 38 For this component a multi-conductor wire is also used to reduce the HF equivalent resistance, and therefore the power dissipation. 2.2 Selection of parameters Figure 12. Parameters setting block Cosc = 1 nF (5% or better) is chosen. The following constant values are calculated (COSC in pF): A 3465 . 0 f f f f 1 Q f f Q 1 Z V 2 2 1 2 I I 2 0 run 2 2 0 run 2 0 run 0 out pk , ballast RMS , hb = ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ + ⎥ ⎥ ⎦ ⎤ ⎢ ⎢ ⎣ ⎡ ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ − ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ + ⋅ π ⋅ ⋅ = ≈ mW 100 I R P 2 hbcs hbcs RMS , hbcs < ⋅ ≈ mm 37 . 3 L A N 2 l turns / nH 8 . 38 N L A turns 183 A B L I N e 2 0 gap 2 2 L e max max = μ × = → ⎪ ⎪ ⎭ ⎪⎪ ⎬ ⎫ = = = = |
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