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AN3400 Datasheet(PDF) 52 Page - STMicroelectronics |
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AN3400 Datasheet(HTML) 52 Page - STMicroelectronics |
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52 / 78 page  PNP storage time phase modeling AN3400 52/78 Doc ID 018840 Rev 1 13 PNP storage time phase modeling During the PNP storage time phase the emitter-base voltage does not change from its forward bias value (VEBp-on=VEBp-sat) due to the excess minority carriers stored in the base region. A negative base current starts removing this excess carrier at a rate determined by the base driving network. PNP bipolar working condition during this phase is modeled by the following circuital scheme in which Rbase-pnp is an opportunely sized variable resistor that takes into consideration the effect of the base resistance modulation (increase) due to the removal of the excess carriers: Figure 29. Driving network modeling for the PNP bipolar storage time phase simulation By combining, with each other, the equations of the System of equations 9, describing the working conditions of the PNP bipolar during the PNP bipolar storage time phase, the following system of two first order linear differential equations valid on all the [t10,t11] time interval in which the signal has the polarity shown in the previous figure and imposed C=Cn=Cp: System of equations 23 AM09819v1 VRs IRs VCn VCp ICn ICp IRb VRb IBpnp ILP Lp Vs Rs Cn Rb Cp VEBp IEpnp ICpnp Q2 VRs IRs VCn VCp ICn ICp IRb VRb VRbase Vs Rs Cn Rb Cp VEBp-on Rbase-pnp IBpnp-off V S t () Asen 2 πft π – () ⋅ – = () () pnpsto Cp b pnpsto Cn b pnpsto Cn V R C 1 V R C 1 t V dt d − − − ⋅ ⋅ − ⋅ ⋅ − = () () + ⋅ ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ + + ⋅ ⋅ − ⋅ ⋅ − = − − − − pnpsto Cp pnp Base S b b pnpsto Cn b pnpsto Cp V R R R 1 R C 1 V R C 1 t V dt d () () pnp Base S EBp pnp Base S S R R C V R R C V − − + ⋅ − + ⋅ + () ( ) t V = t V 10 pnpcon Cn 10 pnpsto Cn − − + − () ( ) t V = t V 10 pnpcon Cp 10 pnpsto Cp − − + − |
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