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AN3400 Datasheet(PDF) 45 Page - STMicroelectronics

Part # AN3400
Description  Analysis and simulation of a BJT complementary pair in a self-oscillating CFL solution
PDF  78 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN3400 Datasheet(HTML) 45 Page - STMicroelectronics

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AN3400
Modeling of the dead time after the NPN storage time phase
Doc ID 018840 Rev 1
45/78
10
Modeling of the dead time after the NPN storage time
phase
During the phase concerning the dead time after the NPN storage time both complementary
pairs of bipolars are inactive and their B-C and B-E junctions are reverse biased. So, in
order to model this phase, the following circuital scheme in which the B-C and B-E junctions
are represented by the respective junction capacitances charging or discharging according
to the working condition, respectively, of the NPN and PNP device is considered.
Figure 25.
Driving network modeling for the simulation of the dead time phase after the NPN
bipolar storage time phase
Neglecting the currents ICEBn and ICBEp of the reverse biased B-E junction capacitances of
the two bipolars, the following conditions are obtained:
Equation 23
where:
●
on the charge phase of the (variable) NPN base-collector
junction capacitance CCBnpn;
●
on the discharge phase of the (variable) PNP
collector-base junction capacitance CBCpnp.
Then, imposing the previous assumptions, combining, with each other, the equations of the
System of equations 5
, describing the working conditions of the NPN bipolar during this
AM09815v1
Cp
Cn
Cs
Rs
Rb
VRs
IRs
VCn
VCp
ICn
ICp
IRb
VRb
ILP
Lp
Q1
Q2
VCs
GND
ICCBn
ICs
ICBCp
VDD
ICBEp
IBpnp
ICEBn
IBnpn
Vs
Cp
Cn
Rs
Rb
VRs
IRs
VCn
VCp
ICn
ICp
IRb
VRb
ILP
VCs
GND
ICCBn
VCCBn
ICs
VCBCp
ICBCp
VCEBn
VDD
VCBEp
ICBEp
IBpnp
ICEBn
IBnpn
Vs
Cs
⇒
≅ 0
I
,
I
CBEp
CEBn
CCBn
Bnpn
I
I
≅
,
CBCp
Bpnp
I
I
≅
and
LP
CS
I
I
≅
 
()
()
t
V
dt
d
C
I
CCBn
CBnpn
CCBn
⋅
=
 
()
()t
V
dt
d
C
I
CBCp
BCpnp
CBCp
⋅
−
=



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