Experiments, results and discussion

TN1156

6/10

DocID025511 Rev 1

Figure 3. Comparison between standard and irradiated HV Power MOSFETs: TC

In the above graph it is possible to notice that, considering both suppliers, the TC curve in

the irradiated device is higher (around double) therefore, the irradiated MOSFETs have a

thermal instability respect to standard ones in linear zone. These results can be explained

measuring the decrease of the threshold voltage against the temperature as shown in the

following graph (it is referred to

Figure 2).

∆V

In irradiated devices, the decrease of the threshold voltage versus the temperature is

higher, in fact: 13 mV/°C between 25 °C and 150 °C, while in standard devices, it is around -

10 mV/°C between 25 °C and 150 °C. If

TH

/

GIPG141120131458FSR

GIPG141120131500FSR