Conclusions

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Conclusions

This paper has evaluated the thermal instability phenomenon of irradiated HV Power

MOSFET devices working in linear zone operating conditions comparing their electro-

thermal behavior with standard products and by considering two different suppliers. A

theoretical study of the phenomenon (the introduction) has been followed by an experiment:

measuring the thermal coefficients of two samples in identical devices. The former includes

irradiated devices while the latter includes standard devices. Results show that irradiated

transistors have a higher thermal instability, in fact both the threshold voltage derating and

defectiveness of interface densities are higher than those in standard ones. Higher levels of

interface states in the irradiated transistors are related to the same irradiation process.

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References

[1] Safe Operating Limits in Linear Zone - G. Consentino, G. Bazzano - PSDE, Dec. 2006

[2] Investigations on Electro-Instability of Low Voltage Power MOSFETs: Theoretical Models

and Ex-perimental comparison results for different structures - G. Consentino, G. Bazzano -

PET 2004 Conference, Chigaco Illinois 2004

[3] Power MOSFETs working in Linear Zone: the dangerous effect of the K gain factor on

thermal in-stability - G. Consentino, IEEE/SPEEDAM 2012, Sorrento, Italy

[4] A new approach to establish the thermal instability condition and the failure time during

the drain current focusing process in a Power MOSFET working in linear zone - G.

Consentino , IEEE/ISIE 2010, Bari, Italy