1 of 9

Optimum Technology Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

Ordering Information

BiFET HBT

LDMOS

2

N/C

1

RF IN

3

4

5RF OUT

6N/C

8

7

RF5515

4.9GHz TO 5.85GHZ LOW NOISE AMPLIFIER

WITH ENABLE

The RF5515 is a high performance Low Noise Amplifier design for

802.11a applications (4.9GHz to 5.85GHz) and other portable consumer

electronics. This miniature LNA features a high dynamic range and high

intercept point with low current consumption around 12mA. The LNA is

DC blocked and internally matched to 50

 at input and output pins. The

IC is featured in a 2.2mm x 2.2mm x 0.5mm module compatible plastic

package.

Features



4.9GHz to 5.85GHz Operation



2.3V to 4.8V Single Supply



1.6dB Noise Figure



11dB Typical Gain

Applications



High Band WiFi LNA/Driver



General Purpose Amplifier for

Portable Applications

RF5515

Standard 25 piece bag

RF5515SR

Standard 100 piece reel

RF5515TR7

Standard 2500 piece reel

RF5515PCK-410

Fully assembled evaluation board and 5 piece loose samples

DS111025



RF5515

4.9GHz to

5.85GHz Low

Noise Ampli-

fier with

Enable

Package Style: 2.2mm x 2.2mm x 0.5mm