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RT8487 Datasheet(PDF) 10 Page - Richtek Technology Corporation

Part # RT8487
Description  High Efficiency BCM LED Driver Controller for High Power
PDF  13 Pages
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Manufacturer  RICHTEK [Richtek Technology Corporation]
Direct Link  http://www.richtek.com
Logo RICHTEK - Richtek Technology Corporation

RT8487 Datasheet(HTML) 10 Page - Richtek Technology Corporation

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RT8487
Copyright © 2015 Richtek Technology Corporation. All rights reserved.
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
DS8487-00
March
2015
10
Thus, a 0.1
F / 500V film capacitor can be chosen in
this case.
Inductor Selection
For high power factor application, the RT8487 operates
the converter in BCM (Boundary-Condition Mode). The
inductance range is defined by peak current of inductor、
maximum and minimum value of switching on time and
off time, for ensuring the inductor operates in BCM. The
peak current of inductor is showed as below :
 
PEAK
PEAK
2Pin
I
=
V
F a
OUT
PEAK
V
where a =
V
and
 
4
3
2
F a
-0.411a +0.296a -0.312a +0.638a-0.0000846,
a|0~0.7
The inductance range is showed as below :
PEAK
OUT
ON
OUT OFF
PEAK
PEAK
V
V
T
VT
L =
=
II
Where 0.5
s  TON  35s and 2s  TOFF  30s
The frequency at the top of the sine wave can be
calculated :
SW
ON
OFF
DELAY
1
f
=
T
+ T
+ T
(TDELAY is determined by the resistor connected to
AND pin , see Turn on delay time)
Turn On Delay Time
After the inductor current has reached zero, a
resonance will occur between the inductor and the
MOSFET drain-source capacitance.
In order to minimize the MOSFET switching losses,
RT8487 provides the flexibility to adjust the delay time
of next switch-on cycle in order to switch-on at the
maximum point of the resonance, which corresponds to
the minimum drain-source voltage value.
The delay time from zero current point to the maximum
of the switch resonance which can be calculated from :
resonance
SW
T
=
L1 C
where CSW is the capacitance at the switch node,
mostly determined by the MOSFET drain-source
capacitance.
The delay time TDELAY from zero current detection
point to next MOSFET switch-on cycle can be adjusted
by the resistor value R3B connected between AND pin
and IC GND
TDELAY(μs)=(-0.4 x R3B
2+3500 x R3B+407500) x 10-6
R3B resister value in k
.
Forward Diode Selection
When the power switch turns off, the path for the
current is through the diode connected between the
switch output and ground. This forward biased diode
must have minimum voltage drop and recovery time.
The reverse voltage rating of the diode should be
greater than the maximum input voltage and the
current rating should be greater than the maximum
load current.
The peak voltage stress of diode is :
D
AC(MAX)
V
1.2
2
V
= 1.2
2
264 = 448V
The input source is universal (VIN = 85V to 264V), VD
will reach 448V.
MOSFET Selection
The peak current through this MOSFET will be over the
maximum output current. This component current
rating
should be greater than 1.2 times the maximum load
current and the reverse voltage rating of the MOSFET
should be greater than 1.2 times the maximum input
voltage, assuming a ±20% output current ripple.
The peak voltage rating of the MOSFET is :
Q1
AC(MAX)
V
= 1.2
2
V
= 1.2
2
264 = 448V
The largest peak current will occur at the highest VIN.
The current rating of MOSFET is determined by the



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