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DS110620

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SGA8343Z

Typical Performance - Engineering Application Circuits

Peak Performance Under Optimum Matching Conditions

Absolute Maximum Ratings

Parameter

Rating

Unit

Collector Current (ICE)

72

mA

Base Current (IB)

1

mA

Collector - Emitter Voltage (VCE)

5

V

Collector - Base Voltage (VCB)

12

V

Emitter - Base Voltage (VEB)

4.5

V

RF Input Power (PIN)

5

dBm

Storage Temperature Range (TSTOR)

-40 to +150

°C

Power Dissipation (PDISS)

350

mW

operating Junction Temperature (TJ)

+150

°C

Operation of this device beyond any one of these limits may cause permanent dam-

age. For reliable continuous operation, the device voltage and current must not

exceed the maximum operating values specified in the table on page one.

Freq

(GHz)

VS

(V)

VCE

(V)

ICQ

(mA)

NF

(dB)

Gain

(dB)

P1dB

(dBm)

(dBm)

S11

(dB)

S22

(dB)

Comments

0.90

53.0

3.0

12

1.25

18.2

9

27.3

-16

-18

series feedback

1.575

3.3

2.7

10

1.25

15.7

6.8

26.5

-10

-25

1.90

5.0

3.0

12

1.4

16.5

9

27.8

-9

-24

2.40

3.3

2.7

10

1.6

14.4

9

27.5

-13

-24

[3] POUT=0dBm per tone, 1MHz tone spacing.

Refer to the application note for additional RF data, PCB layouts, BOMs, biasing instructions, and other key issue to be considered.

Freq

(GHz)

VCE

(V)

ICQ

(mA)

NF

GMAX

(dB)

P1dB

OIP3

0.90

2

10

0.90

23.7

10

25

0.90

3

10

0.94

23.9

13

29

1.90

2

10

1.05

19.1

10

25

1.90

3

10

1.10

19.3

13

29

2.40

2

10

1.15

17.4

10

25

2.40

3

10

1.18

17.7

13

29

Note: Optimum NF, P1dB, and OIP3 performance cannot be achieved simultaneously.

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.