Features

1 of 13

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

SGA8343Z

LOW NOISE, HIGH GAIN SiGe HBT

RFMD’s SGA8343Z is a high performance Silicon Germanium Hetero-

structure Bipolar Transistor (SiGe HBT) designed for operation from DC to

6GHz. The SGA8343Z is optimized for 3V operation but can be biased at

2V for low-voltage battery operated systems. The device provides high

gain, low NF, and excellent linearity at a low cost. It can be operated at

very low bias currents in applications where high linearity is not required.

The matte tin finish on the lead-free package utilizes a post annealing pro-

cess to mitigate tin whisker formation and is RoHS compliant per EU Direc-

tive 2002/95. This package is also manufactured with

green molding compounds that contain no antimony tri-

oxide nor halogenated fire retardants.

0

5

10

15

20

25

30

35

40

012

3

4

567

8

0

0. 3

0. 6

0. 9

1. 2

1. 5

1. 8

2. 1

2. 4

Frequency (GHz)

Gmax

Gain

NF

MIN

Typical Performance - 3V, 10mA



DC to 6GHz Operation





24dB GMAX at 0.9GHz



|GOPT|=0.10 at 0.9GHz



OIP3=+28dBm, P1dB=+9dBm



Low Cost, High Performance, Ver-

satility

Applications



Analog and Digital Wireless Sys-

tems



3G, Cellular, PCS, RFID



Fixed Wireless, Pager Systems



Driver Stage for Low Power Appli-

cations



Oscillators

DS110620



Package: SOT-343

SGA8343ZLow

Noise, High

Gain SiGe HBT

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Maximum Available Gain

23.9

dB

19.3

dB

1.9GHz

17.7

dB

2.4GHz

Minimum Noise Figure

0.94

dB

1.10

dB

1.9GHz

1.18

dB

2.4GHz

Insertion Gain

21.0

22.0

23.0

dB

Noise Figure

1.40

1.75

dB

Gain

15.5

16.5

17.5

dB

Output Third Order Intercept Point

25.8

27.8

dBm

Output 1dB Compression Point

7.5

9.0

dBm

DC Current Gain

120

180

300

Breakdown Voltage

5.7

6.0

V

collector - emitter

Thermal Resistance

200

°C/W

junction - lead

Operating Voltage

4.0

V

collector - emitter

Operating Current

50

mA

collector - emitter

cuitry) during final production test. [2] Sample tested - Samples pulled from each wafer/package lot. Sample test specifications are based on statisti-

cal data from sample test measurements. The test fixture is an engineering application circuit board (parts are pressed down on the board). The

application circuit represents a trade-off between the optimal noise match and input return loss.