ISO7841, ISO7841F

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SLLSEM3C – NOVEMBER 2014 – REVISED JULY 2015

6 Specifications

6.1 Absolute Maximum Ratings

See

(1)

MIN

MAX

UNIT

–0.5

6

V

INx

Voltage

OUTx

–0.5

(3)

V

ENx

Output current

–15

15

mA

Surge immunity

12.8

kV

Maximum junction temperature

150

°C

Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values except differential I/O bus voltages are with respect to the local ground terminal (GND1 or GND2) and are peak

voltage values.

(3)

Maximum voltage must not exceed 6 V

6.2 ESD Ratings

VALUE

UNIT

±6000

Electrostatic discharge

V

Charged device model (CDM), per JEDEC specification JESD22-C101, all

±1500

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN

NOM

MAX

UNIT

Supply voltage

2.25

5.5

V

–4

High-level output current

–2

mA

–1

4

Low-level output current

2

mA

1

High-level input voltage

(1)

(1)

V

Low-level input voltage

0

(1)

V

DR

Signaling rate

0

100

Mbps

–55

150

°C

Ambient temperature

–55

25

125

°C

(1)

(2)

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