AFE5812ZCF datasheet(21/109 Pages) TI

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Vcntl (V)

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

1.1 1.2

LNA 15dB

LNA 18dB

LNA 24dB

Vcntl (V)

0.1

0.2

0.3

0.4

0.5

1.5

2.5

LNA 15dB

LNA 18dB

LNA 24dB

Vcntl (V)

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

1.1 1.2

LNA 15dB

LNA 18dB

LNA 24dB

Vcntl (V)

0.1

0.2

0.3

0.4

0.5

1.5

2.5

LNA 15dB

LNA 18dB

LNA 24dB

Vcntl (V)

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

1.1 1.2

LNA 15dB

LNA 18dB

LNA 24dB

Vcntl (V)

0.1

0.2

0.3

0.4

0.5

1.5

2.5

LNA 15dB

LNA 18dB

LNA 24dB

AFE5812

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SLOS816A – MARCH 2015 – REVISED MARCH 2015

Typical Characteristics (continued)

AVDD_5 V = 5 V, AVDD = 3.3 V, AVDD_ADC = 1.8 V, DVDD = 1.8 V, AC-coupled with 0.1-µF capacitors at INP and 15-nF

capacitors at INM, No active termination, VCNTL = 0 V, FIN = 5 MHz, LNA = 18 dB, PGA = 24 dB, 14 bit, sample rate = 65

MSPS, LPF filter = 15 MHz, low-noise mode, Single-ended VCNTL mode, VCNTLM = GND, ADC is configured in internal

reference mode, VOUT = –1 dBFS, 500-Ω CW feedback resistor, CMOS 16× clock, digital demodulator is disabled, at ambient

temperature TA = 25°C, unless otherwise noted.

Figure 18. IRN, PGA = 24 dB and Low Noise Mode

Figure 19. IRN, PGA = 24 dB and Low Noise Mode

Figure 20. IRN, PGA = 24 dB and Medium-Power Mode

Figure 21. IRN, PGA = 24 dB and Medium-Power Mode

Figure 22. IRN, PGA = 24 dB and Low-Power Mode

Figure 23. IRN, PGA = 24 dB and Low-Power Mode

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