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BFP640 Datasheet(PDF) 8 Page - Infineon Technologies AG

Part # BFP640
Description  Low Noise Silicon Germanium Bipolar RF Transistor
PDF  28 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP640 Datasheet(HTML) 8 Page - Infineon Technologies AG

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BFP640
Features
Data Sheet
8
Revision 2.0, 2015-03-13
2
Features
Applications
As Low Noise Amplifier (LNA) in
•
Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and
C-band LNB
•
Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5/5.5 GHz, UWB,
Bluetooth
•
Multimedia applications such as mobile/portable TV, CATV, FM Radio
•
3G/4G UMTS/LTE mobile phone applications
•
ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
•
Linear low noise amplifier based on Infineon´s reliable,
high volume SiGe:C technology
•
High linearity OIP3 = 27.5 dBm @ 5.5 GHz, 3 V, 25 mA
•
High transition frequency fT = 42 GHz @ 3 V, 30 mA
•
NFmin = 0.85 dB @ 3.5 GHz, 3 V, 6 mA
•
Maximum power gain Gma = 18 dB @ 3.5 GHz, 3 V, 25 mA
•
Low power consumption, ideal for mobile applications
•
Very common as GPS low noise amplifier, see respective
application notes on Infineon internet page
•
Easy to use Pb-free (RoHS compliant) and halogen-free
standard package with visible leads
•
Qualification report according to AEC-Q101 available
Product Name
Package
Pin Configuration
Marking
BFP640
SOT343
1 = B
2 = E
3 = C
4 = E
R4s
1
2
3
4



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