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BFP760 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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BFP760 Datasheet(HTML) 7 Page - Infineon Technologies AG |
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7 / 27 page ![]() BFP760 Product Brief Data Sheet 7 Revision 1.1, 2013-08-05 1 Product Brief The BFP760 is a linear and very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to V CEO = 4.0 V and currents up to IC = 70 mA. With its high linearity at currents as low as 10 mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately 45 GHz, hence the device offers high power gain at frequencies up to 9 GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads. |
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