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BFP760 Datasheet(PDF) 9 Page - Infineon Technologies AG

Part # BFP760
Description  Low Noise Silicon Germanium Bipolar RF Transistor
PDF  27 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP760 Datasheet(HTML) 9 Page - Infineon Technologies AG

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BFP760
Maximum Ratings
Data Sheet
9
Revision 1.1, 2013-08-05
3
Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Table 3-1
Maximum Ratings at
T
A = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Max.
Collector emitter voltage
V
CEO
–
–
4.0
3.5
V
Open base
T
A = 25 °C
T
A = -55 °C
Collector emitter voltage
V
CES
–
13
V
E-B short circuited
Collector base voltage
V
CBO
–
13
V
Open emitter
Emitter base voltage
V
EBO
–
1.2
V
Open collector
Collector current
I
C
–70
mA
–
Base current
I
B
–4
mA
–
Total power dissipation1)
1)
T
S is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
P
tot
–240
mW
T
S ≤ 95 °C
Junction temperature
T
J
–150
°C
–
Storage temperature
T
Stg
-55
150
°C
–



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