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BFP760 Datasheet(PDF) 8 Page - Infineon Technologies AG

Part # BFP760
Description  Low Noise Silicon Germanium Bipolar RF Transistor
PDF  27 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP760 Datasheet(HTML) 8 Page - Infineon Technologies AG

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BFP760
Features
Data Sheet
8
Revision 1.1, 2013-08-05
2
Features
Applications
As Low Noise Amplifier (LNA) in
•
Mobile and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5 GHz, Bluetooth
•
Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)
and C-band LNB
•
Multimedia applications such as mobile/portable TV, CATV, FM Radio
•
UMTS/LTE mobile phone applications
•
ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, buffer amplifier in VCOs
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
•
Very low noise amplifier based on Infineon´s reliable,
high volume SiGe:C technology
•
High linearity
OIP
3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA
•
High transition frequency
f
T = 45 GHz @ 1 GHz, 3 V, 35mA
•
NF
min = 0.95 dB @ 5.5 GHz, 3 V, 10 mA
•
Maximum power gain Gms = 21.5 dB @ 3.5 GHz, 3 V, 30 mA
•
Low power consumption, ideal for mobile applications
•
Easy to use Pb-free (RoHS compliant) and halogen-free
standard package with visible leads
•
Qualification report according to AEC-Q101 available
Product Name
Package
Pin Configuration
Marking
BFP760
SOT343
1 = B
2 = E
3 = C
4 = E
R6s
1
2
3
4



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