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KAI-04050 Datasheet(PDF) 29 Page - ON Semiconductor

Part # KAI-04050
Description  INTERLINE CCD IMAGE SENSOR
PDF  49 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

KAI-04050 Datasheet(HTML) 29 Page - ON Semiconductor

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KAI-04050 Image Sensor
www.truesenseimaging.com
Revision 5.0 PS-0009 Pg. 29
DC BIAS OPERATING CONDITIONS
Description
Pins
Symbol
Minimum
Nominal
Maximum
Units
Maximum DC
Current
Notes
Reset Drain
RDα
RD
+11.8
+12.0
+12.2
V
10 μA
1
Output Gate
OGα
OG
-2.2
-2.0
-1.8
V
10 μA
1
Output Amplifier
Supply
VDDα
VDD
+14.5
+15.0
+15.5
V
11.0 mA
1, 2
Ground
GND
GND
0.0
0.0
0.0
V
-1.0 mA
Substrate
SUB
VSUB
+5.0
VAB
VDD
V
50 μA
3, 8
ESD Protection Disable
ESD
ESD
-9.5
-9.0
Vx_L
V
50 μA
6, 7, 9
Output Bias Current
VOUTα
Iout
-3.0
-7.0
-10.0
mA

1, 4, 5
Notes:
1.
α denotes a, b, c or d
2.
The maximum DC current is for one output. Idd = Iout + Iss. See Figure 16.
3.
The operating value of the substrate voltage, VAB, will be marked on the shipping container for each device. The value of
VAB is set such that the photodiode charge capacity is the nominal PNe (see Specifications).
4.
An output load sink must be applied to each VOUT pin to activate each output amplifier.
5.
Nominal value required for 40MHz operation per output. May be reduced for slower data rates and lower noise.
6.
Adherence to the power-up and power-down sequence is critical. See Power-Up and Power-Down Sequence section.
7.
ESD maximum value must be less than or equal to V1_L+0.4V and V2_L+0.4V
8.
Refer to Application Note Using Interline CCD Image Sensors in High Intensity Visible Lighting Conditions
9.
Where Vx_L is the level set for V1_L, V2_L, V3_L, or V4_L in the application.
Figure 16: Output Amplifier
Floating
Diffusion
Source
Follower
#1
Source
Follower
#2
Source
Follower
#3
VOUT
Iout
Idd
Iss
HCCD



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