3

SP5668

ELECTRICAL CHARACTERISTICS (continued)

T

production test or design. They apply within the specified ambient temperature and supply voltage ranges unless otherwise

stated.

Characteristic

Pin

Value

Units

Conditions

Min

Typ

Max

Bus timing

4, 5, 6

Data set up , t

SU

300

ns

See Fig. 3

Data hold, t

HD

600

ns

See Fig. 3

Enable set up, t

ES

300

ns

See Fig. 3

Enable hold , t

EH

600

ns

See Fig. 3

Clock to enable, t

CE

300

ns

See Fig. 3

Charge pump output

1

See Table 3, V

pin1

=2V

Current

Charge pump output

1

±10

nA

V

pin1

= 2V

leakage

Drive output current

16

1

mA

V

PIN16

= 0.7V

Drive output saturation

16

350

mV

OS = 1

Voltage when disabled

External reference input

3

2

20

MHz

AC coupled sinewave

frequency

External reference input

3

200

500

mVp-p

AC coupled sinewave

amplitude

Crystal frequency

3

4

12

MHz

Recommended crystal

10

200

Ω

Applies to 4MHz crystal only.

Series resistance

"Parallel resonant" crystal. Figure

quoted is under all conditions

including start up.

Reference oscillator bias

3

200

µA

See Fig. 11

current

REF output voltage*

10

350

mVp-p

AC coupled, 4MHz reference

frequency, See Fig.

Phase detector comparison

4

MHz

frequency

Equivalent phase noise at

dBc/Hz

See **Note

phase detector

RF division ratio

240

131071

PE = 0, Prescaler disabled

480

262142

PE = 1, Prescaler enabled

Reference division ratio

See Table 1

Output ports P0-P2

7-9

Sink current

10

mA

V

PORT

= 0.7V

Leakage current

10

µAV

Lock output

Sink current

1

mA

V

'out of lock'

Leakage current

10

µA

'in lock'

* REF output should be connected to V

CC

if unused

** Note:

1. -148dB @ 1KHz offset with 1MHz comparison frequency measured at the phase comparator.

2. When external reference is used, a high signal level is required for low phase noise.