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AS5410 Datasheet(PDF) 43 Page - ams AG |
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AS5410 Datasheet(HTML) 43 Page - ams AG |
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43 / 56 page  ams Datasheet Page 43 [v2-04] 2015-Oct-07 Document Feedback AS5410 − Register Description Figure 49: E²PROM Page Index In order to write E²PROM content faster it is possible to use page WRITE. A page is 8 words of 16bit width tall and can be stored in the E²PROM during one WRITE cycle. For page writing to the E²PROM the first 7 E²PROM addresses of one page are written to register 0032h and the appropriate E²PROM data can be written to register 0033h. The 8th EEPROM address of the page is written to register 0032h and the appropriate E²PROM data can be written to register 0031h. (Note: First 7th data parts are stored to the volatile memory. Only a write to register 0031h initiates the load cycle and the data is stored in the E²PROM.) The write cycle is completed when the ED (E²PROM Done) bit is set to 1. PAGE ADDRESS 0 0000h-0007h 1 0008h-000Fh 2 0010h-0017h …… 64 01F8h-01FFh |
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