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STD25NF20 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STD25NF20
Description  Automotive-grade N-channel 200 V, 0.10 ??typ., 18 A STripFET™Power MOSFET in a DPAK package
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD25NF20 Datasheet(HTML) 5 Page - STMicroelectronics

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DocID024372 Rev 3
5/16
STD25NF20
Electrical characteristics
16
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
18
A
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
72
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 20 A, VGS = 0
-
1.6
V
trr
Reverse recovery time
ISD = 20 A, di/dt = 100 A/µs
VDD = 50 V (see Figure 17)
-
155
ns
Qrr
Reverse recovery charge
-
775
nC
IRRM
Reverse recovery current
-
10
A
trr
Reverse recovery time
ISD = 20 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 150 °C
(see Figure 17)
-
183
ns
Qrr
Reverse recovery charge
-
1061
nC
IRRM
Reverse recovery current
-
11.6
A



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