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CLX30 Datasheet(PDF) 4 Page - Infineon Technologies AG

Part # CLX30
Description  HiRel X-Band GaAs Power-MESFET
PDF  9 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

CLX30 Datasheet(HTML) 4 Page - Infineon Technologies AG

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CLX30
Semiconductor Group
4 of 10
Draft D, September 99
Electrical Characteristics (continued)
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Linear power gain
1)
VDS = 8 V, ID = 240 mA, f = 2.3 GHz,
Pin = 4 dBm
Glp
dB
CLX30-00
16.5
17.5
-
CLX30-05
17.0
18.0
-
CLX30-10
17.0
18.0
-
Power output at 1dB gain compr.
1)
VDS = 8 V, ID(RF off) = 240 mA, f = 2.3 GHz
P1dB
dBm
CLX30-00
-
29.5
-
CLX30-05
-
30.3
-
CLX30-10
-
30.8
-
Output Power
1)
VDS = 8 V, ID(RF off) = 240 mA, f = 2.3 GHz,
Pin = 14.5 dBm
Pout
dBm
CLX30-00
29.0
29.5
-
CLX30-05
30.0
30.3
-
CLX30-10
30.5
30.8
-
Power added efficiency
1), 2)
VDS = 8 V, ID(RF off) = 240 mA, f = 2.3 GHz,
Pin = 14.5 dBm
PAE
%
CLX30-00
43
48
-
CLX30-05
46
52
-
CLX30-10
48
54
-
Notes.:
1) RF Power characteristics given for power matching conditions
2) Power added efficiency: PAE = (PRFout - PRFin) / PDC



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