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CLX30 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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CLX30 Datasheet(HTML) 3 Page - Infineon Technologies AG |
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3 / 9 page ![]() CLX30 Semiconductor Group 3 of 10 Draft D, September 99 Electrical Characteristics (at TA=25°C; unless otherwise specified) Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V IDss 360 600 840 mA Gate threshold voltage VDS = 3 V, ID = 24 mA -VGth 1.2 2.2 3.2 V Drain current at pinch-off, low VDS VDS = 3 V, VGS = -3.5 V IDp3 - - 120 µA Gate current at pinch-off, low VDS VDS = 3 V, VGS = -3.5 V -IGp3 -- 48 µA Drain current at pinch-off, high VDS VDS = 9.5 V, VGS = -3.5 V IDp9.5 - - 1200 µA Gate current at pinch-off, high VDS VDS = 9.5 V, VGS = -3.5 V -IGp9.5 - - 480 µA Transconductance VDS = 3 V, ID = 240 mA gm 260 320 - mS Thermal resistance Junction to soldering point VDS = 8 V, ID = 240 mA, Ts = +25°C Rth JS -20 - K/W |
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