Data Sheet

1 of 9

2004-06-24

PTF080451

LDMOS RF Power Field Effect Transistor

45 W, 869–960 MHz

Features

•

Broadband internal matching

•

Typical EDGE performance

- Average output power = 22.5 W

- Gain = 18 dB

- Efficiency = 40%

•

Typical CW performance

- Output power at P–1dB = 60 W

- Gain = 17 dB

- Efficiency = 60%

•

Integrated ESD protection: Human Body

Model, Class 1 (minimum)

•

Excellent thermal stability

•

Low HCI drift

•

Capable of handling 10:1 VSWR @ 28 V,

45 W (CW) output power

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Description

The PTF080451 is a 45 W, internally matched GOLDMOS FET intended

for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold

metallization ensures excellent device lifetime and reliability.

PTF080451E

Package 30265

Characteristic

Symbol

Min

Typ

Max

Units

Error Vector Magnitude

EVM (RMS)

—

2.0

—

%

Modulation Spectrum @ 400 kHz

ACPR

—

–62

—

dBc

Modulation Spectrum @ 600 kHz

ACPR

—

–76

—

dBc

Gain

—

18

—

dB

Drain Efficiency

η

D

—

40

—

%

Characteristic

Symbol

Min

Typ

Max

Units

Gain

17

18

—

dB

Drain Efficiency

η

D

40

42

—

%

Intermodulation Distortion

IMD

—

–32

–30

dBc

EDGE Modulation Spectrum Performance

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

36

38

40

42

44

46

48

50

Output Power (dBm)

10

15

20

25

30

35

40

45

50

55

Efficiency

400 kHz

600 kHz