PTF080451 datasheet(3/9 Pages) INFINEON

Part #	PTF080451

Description	LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 9 page

Data Sheet

3 of 9

2004-06-24

PTF080451

Typical Performance (cont.)

All published data at TCASE = 25°C unless otherwise indicated.

Intermodulation Distortion vs. Output Power

(as measured in a broadband circuit)

VDD = 28 V, IDQ = 450 mA, f1 = 959 MHz, f2 = 960 MHz

-80

-70

-60

-50

-40

-30

-20

-10

Output Power (dBm ), PEP

3rd Order

7th

5th

860

880

900

920

940

960

Frequency (MHz)

Output Pow er

Efficiency

Gain

Typical POUT, Gain & Efficiency (at P-1dB)

vs. Frequency

VDD = 28 V, IDQ = 450 mA

IM3 vs. Output Power at Selected Biases

VDD = 28 V, f1 = 959, f2 = 960 MHz

-60

-55

-50

-45

-40

-35

-30

-25

-20

Output Power (dBm), PEP

350 mA

550 mA

450 mA

Broadband Performance

VDD = 28 V, IDQ = 450 mA, POUT = 22.5 W

860

880

900

920

940

960

Frequency (MHz)

-20

-16

-12

-8

-4

Gain

Return Loss

Efficiency

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