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MUX508IPWR Datasheet(PDF) 6 Page - Texas Instruments |
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MUX508IPWR Datasheet(HTML) 6 Page - Texas Instruments |
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6 / 37 page ![]() 6 MUX508, MUX509 SBAS758A – JANUARY 2016 – REVISED MARCH 2016 www.ti.com Product Folder Links: MUX508 MUX509 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 7.4 Thermal Information THERMAL METRIC(1) MUX50x UNIT PW (TSSOP) 16 PINS RθJA Junction-to-ambient thermal resistance 103.8 °C/W RθJC(top) Junction-to-case (top) thermal resistance 36.8 °C/W RθJB Junction-to-board thermal resistance 49.8 °C/W ψJT Junction-to-top characterization parameter 2.7 °C/W ψJB Junction-to-board characterization parameter 49.1 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W (1) When VS is positive, VD is negative, and vice versa. 7.5 Electrical Characteristics: Dual Supply at TA = 25°C, VDD = 15 V, and VSS = –15 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ANALOG SWITCH Analog signal range TA = –40°C to +125°C VSS VDD V RON On-resistance VS = 0 V, ICH = 1 mA 125 170 Ω VS = ±10 V, ICH = 1 mA 145 200 TA = –40°C to +85°C 230 TA = –40°C to +125°C 250 ΔRON On-resistance mismatch between channels VS = ±10 V, ICH = 1 mA 2.4 6 Ω TA = –40°C to +85°C 9 TA = –40°C to +125°C 11 RFLAT On-resistance flatness VS = 10 V, 0 V, –10 V 22 45 Ω TA = –40°C to +85°C 53 TA = –40°C to +125°C 58 On-resistance drift VS = 0 V 0.52 %/°C IS(OFF) Input leakage current Switch state is off, VS = ±10 V, VD = ±10 V (1) –1 0.01 1 nA TA = –40°C to +85°C –10 10 TA = –40°C to +125°C –25 25 ID Output leakage current Switch state is off, S = ±10 V, D = ±10 V(1) –1 0.01 1 nA TA = -40°C to +85°C –10 10 TA = -40°C to +125°C –50 50 Switch state is on, D = ±10 V, S = floating –1 0.01 1 nA TA = –40°C to +85°C –10 10 TA = –40°C to +125°C –50 50 LOGIC INPUT VIH High-level input voltage 2.0 V VIL Low-level input voltage 0.8 V ID Input current 0.15 µA |
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