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BCM4354 Datasheet(PDF) 186 Page - Cypress Semiconductor |
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BCM4354 Datasheet(HTML) 186 Page - Cypress Semiconductor |
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186 / 192 page ![]() Junction Temperature Estimation and PSIJT Versus ThetaJC BCM4354 Data Sheet BROADCOM CONFIDENTIAL Broadcom® October 15, 2014 • 4354-DS109-R Page 185 Junction Temperature Estimation and PSIJT Versus ThetaJC The package thermal characterization parameter PSIJT (JT) yields a better estimation of actual junction temperature (TJ) than using the junction-to-case thermal resistance parameter ThetaJC (θJC). The reason for this is that θJC is based on the assumption that all the power is dissipated through the top surface of the package case. In actual applications, however, some of the power is dissipated through the bottom and sides of the package. JT takes into account the power dissipated through the top, bottom, and sides of the package. The equation for calculating the device junction temperature is: TJ = TT + P x JT Where: •TJ = Junction temperature at steady-state condition (°C) •TT = Package case top center temperature at steady-state condition (°C) • P = Device power dissipation (Watts) • JT = Package thermal characteristics; no airflow (°C/W) Environmental Characteristics For environmental characteristics data, see Table 30: “Environmental Ratings,” on page 126. |
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