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BSH108 Datasheet(PDF) 7 Page - NXP Semiconductors

Part # BSH108
Description  N-channel enhancement mode field-effect transistor
PDF  13 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BSH108 Datasheet(HTML) 7 Page - NXP Semiconductors

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Philips Semiconductors
BSH108
N-channel enhancement mode field-effect transistor
Product specification
Rev. 02 — 25 October 2000
7 of 13
9397 750 07652
© Philips Electronics N.V. 2000. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C and 150 °C; VDS > ID × RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa33
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
180
max
typ
min
V
GS(th)
T
j
(
o
C)
(V)
03aa36
0
0.5
1
1.5
2
2.5
3
max
typ
min
I
D
V
GS
(V)
10-6
10-5
10-4
10-3
10-2
10-1
(A)
03aa84
0
1
2
3
4
5
6
7
8
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
ID (A)
gfs
(S)
VDS > ID X RDSon
Tj = 25
o
C
150
o
C
03aa86
10
102
103
10-1
110
102
VDS (V)
Ciss, Coss,
Crss (pF)
Ciss
Coss
Crss



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