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BSH108 Datasheet(PDF) 8 Page - NXP Semiconductors |
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BSH108 Datasheet(HTML) 8 Page - NXP Semiconductors |
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8 / 13 page ![]() Philips Semiconductors BSH108 N-channel enhancement mode field-effect transistor Product specification Rev. 02 — 25 October 2000 8 of 13 9397 750 07652 © Philips Electronics N.V. 2000. All rights reserved. Tj =25 °C and 150 °C; VGS =0V ID = 0.5 A; VDD = 15 V; Tj =25 °C Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. 03aa85 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD (V) IS (A) 150 o C Tj = 25 o C V GS = 0V 03ab10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 01 23 45 67 89 10 QG (nC) VGS (V) ID = 0.5 A Tj = 25 oC VDD = 15 V |
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