BSH108 datasheet(1/13 Pages) PHILIPS

Part #	BSH108

Description	N-channel enhancement mode field-effect transistor

PDF	13 Pages

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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1 / 13 page

BSH108

N-channel enhancement mode ﬁeld-effect transistor

Rev. 02 — 25 October 2000

Product speciﬁcation

c

M3D088

1.

Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™1 technology.

Product availability:

BSH108 in SOT23.

2.

Features

s TrenchMOS™ technology

s Very fast switching

s Logic level compatible

s Subminiature surface mount package.

3.

Applications

s Battery management

s High speed switch

s Low power DC to DC converter.

4.

Pinning information

1.

TrenchMOS is a trademark of Royal Philips Electronics.

Table 1:

Pinning - SOT23, simpliﬁed outline and symbol

Description

Simpliﬁed outline

Symbol

1

gate (g)

SOT23

2

source (s)

3

drain (d)

MSB003

Top view

12

3

s

d

g

MBB076

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BSH108 Datasheet(PDF) 1 Page - NXP Semiconductors

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