DS1822 datasheet(19/20 Pages) DALLAS

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DS1822

19 of 20

AC ELECTRICAL CHARACTERISTICS: NV MEMORY

(-55°C to +100°C; VDD = 3.0V to 5.5V)

PARAMETER

SYMBOL

CONDITION

MIN

TYP

MAX

UNITS

NV Write Cycle Time

twr

210

EEPROM Writes

NEEWR

-55°C to +55°C

50k

writes

EEPROM Data Retention

tEEDR

-55°C to +55°C

years

AC ELECTRICAL CHARACTERISTICS

(-55°C to +125°C; VDD = 3.0V to 5.5V)

PARAMETER

SYMBOL

CONDITION

MIN TYP MAX UNITS NOTES

Temperature Conversion

tCONV

9-bit resolution

93.75

Time

10-bit resolution

187.5

11-bit resolution

375

12-bit resolution

750

Time to Strong Pullup On

tSPON

Start Convert T

Command Issued

µs

Time Slot

tSLOT

120

µs

Recovery Time

tREC

1µs

Write 0 Low Time

rLOW0

120

µs

Write 1 Low Time

tLOW1

115

µs

Read Data Valid

tRDV

µs

Reset Time High

tRSTH

480

µs

Reset Time Low

tRSTL

480

µs

1,2

Presence Detect High

tPDHIGH

µs

Presence Detect Low

tPDLOW

240

µs

Capacitance

CIN/OUT

NOTES:

Refer to timing diagrams in Figure 18.

Under parasite power, if tRSTL > 960

ms, a power on reset may occur.

TYPICAL PERFORMANCE CURVE Figure 17

DS1822 Typical Performance Curve

-1.2

-1

-0.8

-0.6

-0.4

-0.2

0.2

0.4

0.6

0.8

-10

Temperature (°C)

+3s Error

-3s Error

Mean Error

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